PART |
Description |
Maker |
ATMEGA128A1 |
Write/Erase cycles: 10,000 Flash/100,000 EEPROM
|
ATMEL Corporation
|
CY14C101J CY14B101J2-SXIT CY14E101J |
1-Mbit (128 K x 8) Serial (I2C) nvSRAM Infinite read, write, and RECALL cycles
|
Cypress Semiconductor
|
MCM69R819AZP8R MCM69R819AZP5 MCM69R819AZP6 MCM69R8 |
MCM69R737A/D 4M Late Write LVTTL ER 14C 12#16 2#4 SKT PLUG 256K X 18 LATE-WRITE SRAM, 2.5 ns, PBGA119 4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3 ns, PBGA119 4M Late Write LVTTL 256K X 18 LATE-WRITE SRAM, 3.5 ns, PBGA119
|
Motorola, Inc Motorola Mobility Holdings, Inc.
|
3100Y30U8999 3100-30U8999 3100-30V10999 3100-30V79 |
Contactors; 3100-30H10999CG=CONTACTOR ( Products Unlimited ) Definite Purpose Contactor 3-pole, 20-40 FLA AC Coil
|
Tyco Electronics
|
GS8330LW72C-200 GS8330LW36C-250I GS8330LW36C-200 G |
36Mb x1Lp CMOS I/O Late Write SigmaRAM 512K X 72 LATE-WRITE SRAM, 2.1 ns, PBGA209 36Mb Σ1x1Lp CMOS I/O Late Write SigmaRAM
|
GSI Technology, Inc.
|
225-0017-000 |
5 polarizations available, Rated 500 mating cycles
|
List of Unclassifed Manufacturers
|
AM29F400AB AM29F400AB-120EC AM29F400AB-120ECB AM29 |
4 Megabit (524288 x 8-Bit/262144 x 16-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory 4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
|
AMD[Advanced Micro Devices]
|
PV2S640SS |
ELECTRIC LIFE: 200,000 MAKE-AND-BREAK CYCLES
|
E-SWITCH
|
BG440.2505201 BG440.5005201 BG440 |
EC-motor with planetary gear unit for automatic spindle positioning cycles
|
Baumer IVO GmbH & Co. KG
|
HOA1872-13 HOA1873-13 HOA1878-11 HOA1878-13 |
PC Card frame kits, Back connectors; HRS No: 234-0017-7 00; No. of Positions: 15; Mating/Unmating Cycles: 3000 PC Card frame kits, Back connectors; HRS No: 234-0009-9 00; No. of Positions: 25; Mating/Unmating Cycles: 3000
|
Toshiba, Corp.
|